Silyb Wafer Services: CMP

CMP

812AFBA: 15kA TEOS Low Particle

15kA Low Particle TEOS on Low Particle Si.

812BEBA: 10kA HDP Low Particle

10kA Low Particle HDP on Low Particle Si.

812CEBA: 10kA Low Particle Black Diamond 1

10kA Low Particle Black Diamond 1 on Low Particle Prime Si

812DBBA: 2kA Low Particle SiC

2kA "BLOk" Silicon Carbide (SiC) on Low Particle Prime Si.

812EBBA: 2kA Low Particle Si₃N₄ (SiN)

2kA Low Particle Si₃N₄ on Low Particle Prime Si.

812QBZA: 2kA Low Particle P doped Poly Silicon

2kA P Doped Poly Silicon deposited on Low Particle Prime Si.

812SBBA: 2kA Low Particle SiON

2kA SiON Anti Reflective Capping film on Low Particle Prime Si.

Index of Refraction provided with purchase.

813AFZA: 15kA TEOS Low Cost

15kA TEOS on Test Si.

Specifically designed to reduce cost without influencing film properties.

813BEZA: 10kA HDP Low Cost

10kA HDP on Test Si.

Specifically designed to reduce cost without influencing film properties.

813CEZA: 10kA Black Diamond

10kA Black Diamond 1 on Test Si

813DBZA: 2kA SiC

2kA "BLOk" Silicon Carbide on Test Si.

813EBZA: 2kA Si₃N₄ (SiN)

2kA Si₃N₄ on Test Si

Si₃N₄ film identical to 812EBZA
Index of Refraction provided with purchase
Specifically designed to reduce cost without influencing removal rate stability.
Same Si₃N₄ used in Silyb Pattern Wafers

813FFZA: 15kA ECP Cu

15kA ECP Cu stack on Test Si.

Improved Defectivity and RR stability as demonstrated by other customers (data available upon request)
Cu sheet film matches Silyb Cu pattern wafers for improved experimental repeatability.
Sheet resistivity provided with purchase
Specifically designed to reduce cost without influencing film properties.

813GBZA: 2kA Ta

2kA Ta on 5kA TEOS on Test Si.

Ta sheet film matches Silyb Cu pattern wafers for improved experimental repeatability.
Bulk Resistivity provided with purchase.
Specifically designed to reduce cost without influencing film properties.
Great for Removal Rate, Non-Uniformity or Defectivity work.

813HBZA: 2kATaN

2kA TaN on 5kA TEOS on Test Si.

TaN sheet film matches Silyb Cu pattern wafers for improved experimental repeatability.
Specifically designed to reduce cost without influencing film properties.
Great for Removal Rate, Non-Uniformity or Defectivity work.

813IBZA: 2kA Ti

2kA Ti on 5kA TEOS on Test Si.

Specifically designed to reduce cost without influencing film properties.
Great for Removal Rate, Non-Uniformity or Defectivity work.

813JBZA: 2kA TiN

2kA TiN on 5kA TEOS on Test Si.

Specifically designed to reduce cost without influencing film properties.
Great for Removal Rate, Non-Uniformity or Defectivity work.

813KDZA: 8kA CVD W

8kA CVD W on 250A Ti on 250A TiN on 5kA TEOS on Test Si.

Specifically designed to reduce cost without influencing film properties.
Great for Removal Rate, Non-Uniformity or Defectivity work.

813RDZA: 1kA PVD Ruthenium

1kA Ru on 250A Ta on 1kA Pad Oxide

Advanced Barrier Metal Integration Wafers

813SBZA: 2kA SiON

2kA SiON Anti Reflective Capping film on Low Cost Test Si.

SiON sheet film matches Silyb Cu/BD-SION capped patterned wafers for improved experimental repeatibility.

S854CUBD-LC: Low Cost MIT854 Cu/Low-k CMP Patterned Test Wafer

MIT854 Cu/BD Patterned wafers optimized to reduce cost and improve quality

Optimized for the highest fab quality while maintaining low cost.

S854CUBD: Cu/Low-k MIT 854 Patterned Wafer

180nm MIT854 Cu Characterization Wafer with Black Diamond Low-k ILD.

Uncapped Black Diamond ILD
65nm IC Fab Manufactured ensuring low defects

S854CUBDSION: Cu/Low-k MIT 854 Patterned Wafer

180nm MIT854 Cu Characterization Wafer with SiON Capped Black Diamond Low-k ILD.

SiON capped Black Diamond ILD
Silyb sheet wafers match Silyb Pattern wafer films for improved experimental repeatability.

S854CUBDTEOS: Cu/Low-k MIT 854 Patterned Wafer

180nm MIT854 Cu Characterization Wafer with TEOS capped Black Diamond Low-k ILD.

TEOS capped Black Diamond ILD
Silyb sheet wafers match Silyb Pattern wafer films for improved experimental repeatability.

S854CUTEOS-LC: Low Cost MIT 854 Cu/TEOS CMP Patterned Test Wafers

MIT854 Cu/TEOS patterned test wafers optimized to reduce cost and improve quality

Highest fab quality wafers optimized to be lower cost.

S854CUTEOS: Cu/TEOS MIT854 Patterned Wafer

180nm MIT854 Cu Characterization Wafer with TEOS ILD.

TEOS ILD
Silyb sheet wafers match Silyb Pattern wafer films for improved experimental repeatability.

SJ085CUBD: Cu/BD Memory Integration Test Wafer

90nm Cu/Low-k Memory Integration Test Mask

Dummied Features for improved dishing
Memory and Logic structures included for device polish data.

SJ085CUTEOS: Cu/TEOS Memory Integration Wafers

90nm Cu Memory/Logic CMP Test Mask

0.16um minimum features
Dummied features included for fab quality data
SRAM and LOGIC fields included to demonstrate device polish performance

SK194CUBD: Cu/Low-k 90nm Advanced Patterned Wafer

120nm Cu Characterization Wafer with Black Diamond Low-k ILD.

Uncapped Black Diamond ILD
Silyb sheet wafers match Silyb Pattern wafer films for improved experimental repeatability.

SK194CUBDSION: Cu/Low-k 90nm Advanced Patterned Wafer

120nm minimum feature Advanced Cu Characterization Wafer with SiON capped Black Diamond Low-k ILD.

SiON capped Black Diamond ILD
Silyb sheet wafers match Silyb Pattern wafer films for improved experimental repeatability.

SK194CUTEOS: Cu/TEOS 90nm Advanced Patterned Wafer

120nm minimum feature Cu Characterization Wafer with TEOS ILD.

TEOS ILD
Silyb sheet wafers match Silyb Pattern wafer films for improved experimental repeatability.

1213FFZA: 15kA ECP Cu

15kA ECP Cu on 1kA PVD Cu Seed on 250Ta on 1kA Pad Oxide on 300mm Si

Less than 3% Non Uniformity

1213GBZA: 2kA Ta

2kA Ta on 1kA Pad Ox on 300mm Si

Low and consistent NU% for improved RR data

1213HBZA: 2kA TaN

2kA TaN on 1kA Pad Ox on 300mm Si

Low and consistent NU% for improved RR data.

1213IBZA: 2kA Ti

2kA Ti on 1kA Pad Ox on 300mm Si

Low and Consistent NU% for improved RR data

1213IBZA: 2kA TiN

2kA TiN on 1kA Pad Ox on 300mm Si

Low and consistent NU% for improved RR data.

1213XCBA: 5kA BDIIx (k-2.4)

5kA BDIIx (k-2.4) on 300mm Si

Porosity 20-30%
Available in 5 wafer lots

S754CUBDTEOS: MIT754 TEOS Capped BD1 Cu Patterned Wafer

45nm IC Fab manufactured TEOS capped BD MIT 754 Patterned Wafers.

IC Fab Manufactured, lowest defectivity, ask for our qualification report!

S754CUOX: MIT754 Cu Oxide Patterned Wafer

300mm 754 Cu Patterned wafers with 10kA Cu-1.4kA Cu Seed - 250A Ta - 5000A SiO - 1000A SiN - 1000A Pad Ox

Manufactured at a 45nm IDM in Asia
Proven Defect Performance, 4x lower defectivity vs industry standard

S854WTEOS: W/TEOS MIT854 Patterned Wafer

180nm MIT854 W Interconnect Wafer with TEOS ILD

SCONWTEOS: Advanced CMP/Etch Contact Test Wafer

Large variety of contact sizes and densities optimized for CMP and Etch development.

Please contact Silyb Wafer Services for detailed stack information.

SJ085WTEOS

160nm W Advanced Contact Wafers

Device Manufacturer Test Chip Design
Multiple Areas to investigate CMP, Etch, or Lithography

SK194WTEOS: W/TEOS 90nm Advanced Interconnect Patterned Wafer

120nm minimum feature W Interconnect Characterization Wafer with TEOS ILD.

TEOS ILD

1213KDZA: 8kA CVD W

8kA CVD W on 250A Ti on 1kA Pad Ox on 300mm Si

High quality CVD W films for your CMP studies.

S754WOX: MIT754 W/Oxide Test Wafers

Industry leading defectivity. Improve your chances of qualification by using the lowest defect test wafers available

45nm IC Fab manufactured MIT754 W patterned test wafers.
4x lower defects versus other available 300mm W Patterned wafers

S864HDP: STI MIT 864 Pattern Wafer

250nm HDP Shallow Trench Isolation Planarity Characterization Vehicle.

Silyb sheet wafers match Silyb Pattern wafer films for improved experimental repeatability.
Ideal for planarization studies on Shallow Trench Isolation.

S864RAMHDP: STI HDP Planarization and Defectivity Wafer

Hybrid MIT864 and SRAM HDP Planarization and Defectivity wafer.

S864TEOS: TEOS MIT864 Planarization Wafer

250nm Minimum feature MIT 864 TEOS ILD planarization wafer

Silyb sheet wafers match Silyb Pattern wafer films for improved experimental repeatability.
Useful for CMP pad, Oxide slurry development.
Optimized for low cost and optimum quality.

SMITILDTEOS: TEOS MIT ILD Planarization Wafer

Original MIT ILD TEOS planarization wafer.

Useful for CMP pad, Oxide slurry development.
Optimized for low cost and optimum quality.

SRAMHDP: STI RAM / LOGIC Defectivity Wafer

Minimum 200nm Various SRAM Patterned Device Wafers for Defectivity Characterization.