1213FFZA: 15kA ECP Cu
15kA ECP Cu on 1kA PVD Cu Seed on 250Ta on 1kA Pad Oxide on 300mm Si
- Less than 3% Non Uniformity
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1213GBZA: 2kA Ta
2kA Ta on 1kA Pad Ox on 300mm Si
- Low and consistent NU% for improved RR data
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1213HBZA: 2kA TaN
2kA TaN on 1kA Pad Ox on 300mm Si
- Low and consistent NU% for improved RR data.
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1213IBZA: 2kA Ti
2kA Ti on 1kA Pad Ox on 300mm Si
- Low and Consistent NU% for improved RR data
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1213IBZA: 2kA TiN
2kA TiN on 1kA Pad Ox on 300mm Si
- Low and consistent NU% for improved RR data.
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1213XCBA: 5kA BDIIx (k-2.4)
5kA BDIIx (k-2.4) on 300mm Si
- Porosity 20-30%
- Available in 5 wafer lots
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S754CUBDTEOS: MIT754 TEOS Capped BD1 Cu Patterned Wafer
45nm IC Fab manufactured TEOS capped BD MIT 754 Patterned Wafers.
- IC Fab Manufactured, lowest defectivity, ask for our qualification report!
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S754CUOX: MIT754 Cu Oxide Patterned Wafer
300mm 754 Cu Patterned wafers with
10kA Cu-1.4kA Cu Seed - 250A Ta - 5000A SiO - 1000A SiN - 1000A Pad Ox
- Manufactured at a 45nm IDM in Asia
- Proven Defect Performance, 4x lower defectivity vs industry standard
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