S864HDP: STI MIT 864 Pattern Wafer
250nm HDP Shallow Trench Isolation Planarity Characterization Vehicle.
- Silyb sheet wafers match Silyb Pattern wafer films for improved experimental repeatability.
- Ideal for planarization studies on Shallow Trench Isolation.
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S864RAMHDP: STI HDP Planarization and Defectivity Wafer
Hybrid MIT864 and SRAM HDP Planarization and Defectivity wafer.
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S864TEOS: TEOS MIT864 Planarization Wafer
250nm Minimum feature MIT 864 TEOS ILD planarization wafer
- Silyb sheet wafers match Silyb Pattern wafer films for improved experimental repeatability.
- Useful for CMP pad, Oxide slurry development.
- Optimized for low cost and optimum quality.
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SMITILDTEOS: TEOS MIT ILD Planarization Wafer
Original MIT ILD TEOS planarization wafer.
- Useful for CMP pad, Oxide slurry development.
- Optimized for low cost and optimum quality.
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SRAMHDP: STI RAM / LOGIC Defectivity Wafer
Minimum 200nm Various SRAM Patterned Device Wafers for Defectivity Characterization.
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