1213FFZA: 15kA ECP Cu
15kA ECP Cu on 1kA PVD Cu Seed on 250Ta on 1kA Pad Oxide on 300mm Si
- Less than 3% Non Uniformity
1213GBZA: 2kA Ta
2kA TaN on 1kA Pad Ox on 300mm Si
- Low and consistent NU% for improved RR data.
1213IBZA: 2kA Ti
2kA Ti on 1kA Pad Ox on 300mm Si
- Low and Consistent NU% for improved RR data
1213IBZA: 2kA TiN
2kA TiN on 1kA Pad Ox on 300mm Si
- Low and consistent NU% for improved RR data.
1213KDZA: 8kA CVD W
8kA CVD W on 250A Ti on 1kA Pad Ox on 300mm Si
- High quality CVD W films for your CMP studies.
1213XCBA: 5kA BDIIx (k-2.4)
5kA BDIIx (k-2.4) on 300mm Si
- Porosity 20-30%
- Available in 5 wafer lots
1213XCBA: 5kA BDIIx (k-2.4)
5kA BDIIx (k-2.4) on 300mm Si
- Porosity 20-30%
- Available in 5 wafer lots
300mm Plasma Damage Wafers
High Quality 300mm Plasma Damage Wafers to improve yield and control. Please click on contact us for more information
- Price includes measurement and reporting
- Used by etching, ion implant, CVD, advanced Cleans and many other fab modules to monitor and trouble shoot yield issues.
812AFBA: 15kA TEOS Low Particle
15kA Low Particle TEOS on Low Particle Si.
812BEBA: 10kA HDP Low Particle
10kA Low Particle HDP on Low Particle Si.
812CEBA: 10kA Low Particle Black Diamond 1
10kA Low Particle Black Diamond 1 on Low Particle Prime Si
812DBBA: 2kA Low Particle SiC
2kA "BLOk" Silicon Carbide (SiC) on Low Particle Prime Si.
812EBBA: 2kA Low Particle Si3N4 (SiN)
2kA Low Particle Si3N4 on Low Particle Prime Si.
- Si3N4 film identical to 812EBZA
- Index of Refraction provided with purchase
- Specifically designed to reduce cost without influencing removal rate stability.
- Same Si3N4 used in Silyb Pattern Wafers
812QBZA: 2kA Low Particle P doped Poly Silicon
2kA P Doped Poly Silicon deposited on Low Particle Prime Si.
812SBBA: 2kA Low Particle SiON
2kA SiON Anti Reflective Capping film on Low Particle Prime Si. Index of Refraction provided with purchase.
813AFZA: 15kA TEOS Low Cost
15kA TEOS on Test Si. Specifically designed to reduce cost without influencing film properties.
813BEZA: 10kA HDP Low Cost
10kA HDP on Test Si. Specifically designed to reduce cost without influencing film properties.
813CEZA: 10kA Black Diamond
10kA Black Diamond 1 on Test Si.
813FFZA: 15kA ECP Cu
15kA ECP Cu stack on Test Si.
- Improved Defectivity and RR stability as demonstrated by other customers (data available upon request)
- Cu sheet film matches Silyb Cu pattern wafers for improved experimental repeatability.
- Sheet resistivity provided with purchase
- Specifically designed to reduce cost without influencing film properties.
813GBZA: 2kA Ta
2kA Ta on 5kA TEOS on Test Si.
- Ta sheet film matches Silyb Cu pattern wafers for improved experimental repeatability.
- Bulk Resistivity provided with purchase.
- Specifically designed to reduce cost without influencing film properties.
- Great for Removal Rate, Non-Uniformity or Defectivity work.
813RDZA: 1kA PVD Ruthenium
1kA Ru on 250A Ta on 1kA Pad Oxide
- Advanced Barrier Metal Integration Wafers
813SBZA: 2kA SiON
2kA SiON Anti Reflective Capping film on Low Cost Test Si.
- SiON sheet film matches Silyb Cu/BD-SION capped patterned wafers for improved experimental repeatibility.
Please Contact us for Available 2 inch Blanket Wafers
All Silyb’s Sheet Wafers are Available in 2 inch Diameter
Please Contact Us for Available 2 Inch Pattern Wafers
All Silyb’s Pattern Wafers are Available in 2 inch Diameter.
Please Contact Us for Other Diameter Wafers
S754CUBDTEOS: MIT754 TEOS Capped BD1 Cu Patterned Wafer
45nm IC Fab manufactured TEOS capped BD MIT 754 Patterned Wafers.
- IC Fab Manufactured, lowest defectivity, ask for our qualification report!
S754CUOX: MIT754 Cu Oxide Patterned Wafer
300mm 754 Cu Patterned wafers with 10kA Cu-1.4kA Cu Seed – 250A Ta – 5000A SiO – 1000A SiN – 1000A Pad Ox
- Manufactured at a 45nm IDM in Asia
- Proven Defect Performance, 4x lower defectivity vs industry standard
S754TEOS-WM
300mm Watermark Test Wafer
- 0.18um to 100um features specially manufactured to ensure hydrophobic and hydrophyllic trench wall interfaces
- 45nm IC Fab manufactured ensuring high quality and consistency
- Please contact us for pricing and leadtime
S754WOX: MIT754 W/Oxide Test Wafers
Industry leading defectivity. Improve your chances of qualification by using the lowest defect test wafers available
- 45nm IC Fab manufactured MIT754 W patterned test wafers.
- 4x lower defects versus other available 300mm W Patterned wafers
S854CUBD-LC: Low Cost MIT854 Cu/Low-k CMP Patterned Test Wafer
MIT854 Cu/BD Patterned wafers optimized to reduce cost and improve quality
- Optimized for the highest fab quality while maintaining low cost.
S854CUBD: Cu/Low-k MIT 854 Patterned Wafer
180nm MIT854 Cu Characterization Wafer with Black Diamond Low-k ILD.
- Uncapped Black Diamond ILD
- 65nm IC Fab Manufactured ensuring low defects
S854CUBDSION: Cu/Low-k MIT 854 Patterned Wafer
180nm MIT854 Cu Characterization Wafer with SiON Capped Black Diamond Low-k ILD.
- SiON capped Black Diamond ILD
- Silyb sheet wafers match Silyb Pattern wafer films for improved experimental repeatability.
S854CUBDTEOS: Cu/Low-k MIT 854 Patterned Wafer
180nm MIT854 Cu Characterization Wafer with TEOS capped Black Diamond Low-k ILD.
- TEOS capped Black Diamond ILD
- Silyb sheet wafers match Silyb Pattern wafer films for improved experimental repeatability.
S854CUTEOS-LC: Low Cost MIT 854 Cu/TEOS CMP Patterned Test Wafers
MIT854 Cu/TEOS patterned test wafers optimized to reduce cost and improve quality
- Highest fab quality wafers optimized to be lower cost.
S854CUTEOS-LC: Low Cost MIT 854 Cu/TEOS CMP Patterned Test Wafers
MIT854 Cu/TEOS patterned test wafers optimized to reduce cost and improve quality
- Highest fab quality wafers optimized to be lower cost.
S854CUTEOS: Cu/TEOS MIT854 Patterned Wafer
180nm MIT854 Cu Characterization Wafer with TEOS ILD.
- TEOS ILD
- Silyb sheet wafers match Silyb Pattern wafer films for improved experimental repeatability.
S854WTEOS: W/TEOS MIT854 Patterned Wafer
180nm MIT854 W Interconnect Wafer with TEOS ILD
S864HDP: STI MIT 864 Pattern Wafer
250nm HDP Shallow Trench Isolation Planarity Characterization Vehicle.
- Silyb sheet wafers match Silyb Pattern wafer films for improved experimental repeatability.
- Ideal for planarization studies on Shallow Trench Isolation.
S864RAMHDP: STI HDP Planarization and Defectivity Wafer
Hybrid MIT864 and SRAM HDP Planarization and Defectivity wafer.
S864TEOS: TEOS MIT864 Planarization Wafer
250nm Minimum feature MIT 864 TEOS ILD planarization wafer
- Silyb sheet wafers match Silyb Pattern wafer films for improved experimental repeatability.
- Useful for CMP pad, Oxide slurry development.
- Optimized for low cost and optimum quality.
SCONWTEOS: Advanced CMP/Etch Contact Test Wafer
Large variety of contact sizes and densities optimized for CMP and Etch development.
- Please contact Silyb Wafer Services for detailed stack information.
SJ085CUBD: Cu/BD Memory Integration Test Wafer
90nm Cu/Low-k Memory Integration Test Mask
- Dummied Features for improved dishing
- Memory and Logic structures included for device polish data.
SJ085CUTEOS: Cu/TEOS Memory Integration Wafers
90nm Cu Memory/Logic CMP Test Mask
- 0.16um minimum features
- Dummied features included for fab quality data
- SRAM and LOGIC fields included to demonstrate device polish performance
SJ085WTEOS
160nm W Advanced Contact Wafers
- Device Manufacturer Test Chip Design
- Multiple Areas to investigate CMP, Etch, or Lithography
SK194CUBD: Cu/Low-k 90nm Advanced Patterned Wafer
120nm Cu Characterization Wafer with Black Diamond Low-k ILD.
- Uncapped Black Diamond ILD
- Silyb sheet wafers match Silyb Pattern wafer films for improved experimental repeatability.
SK194CUBDSION: Cu/Low-k 90nm Advanced Patterned Wafer
120nm minimum feature Advanced Cu Characterization Wafer with SiON capped Black Diamond Low-k ILD.
- SiON capped Black Diamond ILD
- Silyb sheet wafers match Silyb Pattern wafer films for improved experimental repeatability.
SK194CUTEOS: Cu/TEOS 90nm Advanced Patterned Wafer
120nm minimum feature Cu Characterization Wafer with TEOS ILD.
- TEOS ILD
- Silyb sheet wafers match Silyb Pattern wafer films for improved experimental repeatability.
SK194WTEOS: W/TEOS 90nm Advanced Interconnect Patterned Wafer
120nm minimum feature W Interconnect Characterization Wafer with TEOS ILD.
- TEOS ILD
SMITILDTEOS: TEOS MIT ILD Planarization Wafer
Original MIT ILD TEOS planarization wafer.
- Useful for CMP pad, Oxide slurry development.
- Optimized for low cost and optimum quality.
SNANDTEOS: 3D Nand Integration Test Wafer
3D NAND Integration, mm scale features
- 0.5mm – 10mm features
- 2um trenches with 3um of TEOS fill
SRAMHDP: STI RAM / LOGIC Defectivity Wafer
Minimum 200nm Various SRAM Patterned Device Wafers for Defectivity Characterization.