812AFBA: 15kA TEOS Low Particle

15kA Low Particle TEOS on Low Particle Si.

812BEBA: 10kA HDP Low Particle

10kA Low Particle HDP on Low Particle Si.

812CEBA: 10kA Low Particle Black Diamond 1

10kA Low Particle Black Diamond 1 on Low Particle Prime Si

812DBBA: 2kA Low Particle SiC

2kA “BLOk” Silicon Carbide (SiC) on Low Particle Prime Si.

812EBBA: 2kA Low Particle Si3N4 (SiN)

2kA Low Particle Si3N4 on Low Particle Prime Si.

812QBZA: 2kA Low Particle P doped Poly Silicon

2kA P Doped Poly Silicon deposited on Low Particle Prime Si.

812SBBA: 2kA Low Particle SiON

2kA SiON Anti Reflective Capping film on Low Particle Prime Si.

  • Index of Refraction provided with purchase.

813AFZA: 15kA TEOS Low Cost

15kA TEOS on Test Si.

  • Specifically designed to reduce cost without influencing film properties.

813BEZA: 10kA HDP Low Cost

10kA HDP on Test Si.

  • Specifically designed to reduce cost without influencing film properties.

813CEZA: 10kA Black Diamond

10kA Black Diamond 1 on Test Si

813DBZA: 2kA SiC

2kA “BLOk” Silicon Carbide on Test Si.

813EBZA: 2kA Si3N4 (SiN)

2kA Si3N4 on Test Si

  • Si3N4 film identical to 812EBZA
  • Index of Refraction provided with purchase
  • Specifically designed to reduce cost without influencing removal rate stability.
  • Same Si3N4 used in Silyb Pattern Wafers

813FFZA: 15kA ECP Cu

15kA ECP Cu stack on Test Si.

  • Improved Defectivity and RR stability as demonstrated by other customers (data available upon request)
  • Cu sheet film matches Silyb Cu pattern wafers for improved experimental repeatability.
  • Sheet resistivity provided with purchase
  • Specifically designed to reduce cost without influencing film properties.

813GBZA: 2kA Ta

2kA Ta on 5kA TEOS on Test Si.

  • Ta sheet film matches Silyb Cu pattern wafers for improved experimental repeatability.
  • Bulk Resistivity provided with purchase.
  • Specifically designed to reduce cost without influencing film properties.
  • Great for Removal Rate, Non-Uniformity or Defectivity work.

813RDZA: 1kA PVD Ruthenium

1kA Ru on 250A Ta on 1kA Pad Oxide

  • Advanced Barrier Metal Integration Wafers

813SBZA: 2kA SiON

2kA SiON Anti Reflective Capping film on Low Cost Test Si.

  • SiON sheet film matches Silyb Cu/BD-SION capped patterned wafers for improved experimental repeatibility.

S854CUBD: Cu/Low-k MIT 854 Patterned Wafer

180nm MIT854 Cu Characterization Wafer with Black Diamond Low-k ILD.

  • Uncapped Black Diamond ILD
  • 65nm IC Fab Manufactured ensuring low defects

S854CUBD-LC: Low Cost MIT854 Cu/Low-k CMP Patterned Test Wafer

MIT854 Cu/BD Patterned wafers optimized to reduce cost and improve quality

  • Optimized for the highest fab quality while maintaining low cost.

S854CUBDSION: Cu/Low-k MIT 854 Patterned Wafer

180nm MIT854 Cu Characterization Wafer with SiON Capped Black Diamond Low-k ILD.

  • SiON capped Black Diamond ILD
  • Silyb sheet wafers match Silyb Pattern wafer films for improved experimental repeatability.

S854CUBDTEOS: Cu/Low-k MIT 854 Patterned Wafer

180nm MIT854 Cu Characterization Wafer with TEOS capped Black Diamond Low-k ILD.

  • TEOS capped Black Diamond ILD
  • Silyb sheet wafers match Silyb Pattern wafer films for improved experimental repeatability.

S854CUTEOS: Cu/TEOS MIT854 Patterned Wafer

180nm MIT854 Cu Characterization Wafer with TEOS ILD.

  • TEOS ILD
  • Silyb sheet wafers match Silyb Pattern wafer films for improved experimental repeatability.

S854CUTEOS-LC: Low Cost MIT 854 Cu/TEOS CMP Patterned Test Wafers

MIT854 Cu/TEOS patterned test wafers optimized to reduce cost and improve quality

  • Highest fab quality wafers optimized to be lower cost.

SJ085CUBD: Cu/BD Memory Integration Test Wafer

90nm Cu/Low-k Memory Integration Test Mask

  • Dummied Features for improved dishing
  • Memory and Logic structures included for device polish data.

SJ085CUTEOS: Cu/TEOS Memory Integration Wafers

90nm Cu Memory/Logic CMP Test Mask

  • 0.16um minimum features
  • Dummied features included for fab quality data
  • SRAM and LOGIC fields included to demonstrate device polish performance

SK194CUBD: Cu/Low-k 90nm Advanced Patterned Wafer

120nm Cu Characterization Wafer with Black Diamond Low-k ILD.

  • Uncapped Black Diamond ILD
  • Silyb sheet wafers match Silyb Pattern wafer films for improved experimental repeatability.

SK194CUBDSION: Cu/Low-k 90nm Advanced Patterned Wafer

120nm minimum feature Advanced Cu Characterization Wafer with SiON capped Black Diamond Low-k ILD.

  • SiON capped Black Diamond ILD
  • Silyb sheet wafers match Silyb Pattern wafer films for improved experimental repeatability.

SK194CUTEOS: Cu/TEOS 90nm Advanced Patterned Wafer

120nm minimum feature Cu Characterization Wafer with TEOS ILD.

  • TEOS ILD
  • Silyb sheet wafers match Silyb Pattern wafer films for improved experimental repeatability.