S864HDP: STI MIT 864 Pattern Wafer

250nm HDP Shallow Trench Isolation Planarity Characterization Vehicle.

  • Silyb sheet wafers match Silyb Pattern wafer films for improved experimental repeatability.
  • Ideal for planarization studies on Shallow Trench Isolation.

S864RAMHDP: STI HDP Planarization and Defectivity Wafer

Hybrid MIT864 and SRAM HDP Planarization and Defectivity wafer.

S864TEOS: TEOS MIT864 Planarization Wafer

250nm Minimum feature MIT 864 TEOS ILD planarization wafer

  • Silyb sheet wafers match Silyb Pattern wafer films for improved experimental repeatability.
  • Useful for CMP pad, Oxide slurry development.
  • Optimized for low cost and optimum quality.

SMITILDTEOS: TEOS MIT ILD Planarization Wafer

Original MIT ILD TEOS planarization wafer.

  • Useful for CMP pad, Oxide slurry development.
  • Optimized for low cost and optimum quality.

SRAMHDP: STI RAM / LOGIC Defectivity Wafer

Minimum 200nm Various SRAM Patterned Device Wafers for Defectivity Characterization.