1213FFZA: 15kA ECP Cu

15kA ECP Cu on 1kA PVD Cu Seed on 250Ta on 1kA Pad Oxide on 300mm Si

  • Less than 3% Non Uniformity

1213XCBA: 5kA BDIIx (k-2.4)

5kA BDIIx (k-2.4) on 300mm Si

  • Porosity 20-30%
  • Available in 5 wafer lots

1213GBZA: 2kA Ta

2kA Ta on 1kA Pad Ox on 300mm Si

  • Low and consistent NU% for improved RR data

1213HBZA: 2kA TaN

2kA TaN on 1kA Pad Ox on 300mm Si

  • Low and consistent NU% for improved RR data.

1213IBZA: 2kA Ti

2kA Ti on 1kA Pad Ox on 300mm Si

  • Low and Consistent NU% for improved RR data

1213IBZA: 2kA TiN

2kA TiN on 1kA Pad Ox on 300mm Si

  • Low and consistent NU% for improved RR data.

1213XCBA: 5kA BDIIx (k-2.4)

5kA BDIIx (k-2.4) on 300mm Si

  • Porosity 20-30%
  • Available in 5 wafer lots

S754CUBDTEOS: MIT754 TEOS Capped BD1 Cu Patterned Wafer

45nm IC Fab manufactured TEOS capped BD MIT 754 Patterned Wafers.

  • IC Fab Manufactured, lowest defectivity, ask for our qualification report!

S754CUOX: MIT754 Cu Oxide Patterned Wafer

300mm 754 Cu Patterned wafers with 10kA Cu-1.4kA Cu Seed – 250A Ta – 5000A SiO – 1000A SiN – 1000A Pad Ox

  • Manufactured at a 45nm IDM in Asia
  • Proven Defect Performance, 4x lower defectivity vs industry standard