812AFBA: 15kA TEOS Low Particle
15kA Low Particle TEOS on Low Particle Si.
812BEBA: 10kA HDP Low Particle
10kA Low Particle HDP on Low Particle Si.
812CEBA: 10kA Low Particle Black Diamond 1
10kA Low Particle Black Diamond 1 on Low Particle Prime Si
812DBBA: 2kA Low Particle SiC
2kA "BLOk" Silicon Carbide (SiC) on Low Particle Prime Si.
812EBBA: 2kA Low Particle Si3N4 (SiN)
2kA Low Particle Si3N4 on Low Particle Prime Si.
- Si3N4 film identical to 812EBZA
- Index of Refraction provided with purchase
- Specifically designed to reduce cost without influencing removal rate stability.
- Same Si3N4 used in Silyb Pattern Wafers
812QBZA: 2kA Low Particle P doped Poly Silicon
2kA P Doped Poly Silicon deposited on Low Particle Prime Si.
812SBBA: 2kA Low Particle SiON
2kA SiON Anti Reflective Capping film on Low Particle Prime Si. Index of Refraction provided with purchase.
813AFZA: 15kA TEOS Low Cost
15kA TEOS on Test Si. Specifically designed to reduce cost without influencing film properties.
813BEZA: 10kA HDP Low Cost
10kA HDP on Test Si. Specifically designed to reduce cost without influencing film properties.
813CEZA: 10kA Black Diamond
10kA Black Diamond 1 on Test Si.
813FFZA: 15kA ECP Cu
15kA ECP Cu stack on Test Si.
- Improved Defectivity and RR stability as demonstrated by other customers (data available upon request)
- Cu sheet film matches Silyb Cu pattern wafers for improved experimental repeatability.
- Sheet resistivity provided with purchase
- Specifically designed to reduce cost without influencing film properties.
813GBZA: 2kA Ta
2kA Ta on 5kA TEOS on Test Si.
- Ta sheet film matches Silyb Cu pattern wafers for improved experimental repeatability.
- Bulk Resistivity provided with purchase.
- Specifically designed to reduce cost without influencing film properties.
- Great for Removal Rate, Non-Uniformity or Defectivity work.
813RDZA: 1kA PVD Ruthenium
1kA Ru on 250A Ta on 1kA Pad Oxide
- Advanced Barrier Metal Integration Wafers
813SBZA: 2kA SiON
2kA SiON Anti Reflective Capping film on Low Cost Test Si.
- SiON sheet film matches Silyb Cu/BD-SION capped patterned wafers for improved experimental repeatibility.
S854CUBD-LC: Low Cost MIT854 Cu/Low-k CMP Patterned Test Wafer
MIT854 Cu/BD Patterned wafers optimized to reduce cost and improve quality
- Optimized for the highest fab quality while maintaining low cost.
S854CUBD: Cu/Low-k MIT 854 Patterned Wafer
180nm MIT854 Cu Characterization Wafer with Black Diamond Low-k ILD.
- Uncapped Black Diamond ILD
- 65nm IC Fab Manufactured ensuring low defects
S854CUBDSION: Cu/Low-k MIT 854 Patterned Wafer
180nm MIT854 Cu Characterization Wafer with SiON Capped Black Diamond Low-k ILD.
- SiON capped Black Diamond ILD
- Silyb sheet wafers match Silyb Pattern wafer films for improved experimental repeatability.
S854CUBDTEOS: Cu/Low-k MIT 854 Patterned Wafer
180nm MIT854 Cu Characterization Wafer with TEOS capped Black Diamond Low-k ILD.
- TEOS capped Black Diamond ILD
- Silyb sheet wafers match Silyb Pattern wafer films for improved experimental repeatability.
S854CUTEOS-LC: Low Cost MIT 854 Cu/TEOS CMP Patterned Test Wafers
MIT854 Cu/TEOS patterned test wafers optimized to reduce cost and improve quality
- Highest fab quality wafers optimized to be lower cost.
S854CUTEOS-LC: Low Cost MIT 854 Cu/TEOS CMP Patterned Test Wafers
MIT854 Cu/TEOS patterned test wafers optimized to reduce cost and improve quality
- Highest fab quality wafers optimized to be lower cost.
S854CUTEOS: Cu/TEOS MIT854 Patterned Wafer
180nm MIT854 Cu Characterization Wafer with TEOS ILD.
- TEOS ILD
- Silyb sheet wafers match Silyb Pattern wafer films for improved experimental repeatability.
S854WTEOS: W/TEOS MIT854 Patterned Wafer
180nm MIT854 W Interconnect Wafer with TEOS ILD
SCONWTEOS: Advanced CMP/Etch Contact Test Wafer
Large variety of contact sizes and densities optimized for CMP and Etch development.
- Please contact Silyb Wafer Services for detailed stack information.
SJ085CUBD: Cu/BD Memory Integration Test Wafer
90nm Cu/Low-k Memory Integration Test Mask
- Dummied Features for improved dishing
- Memory and Logic structures included for device polish data.
SJ085CUTEOS: Cu/TEOS Memory Integration Wafers
90nm Cu Memory/Logic CMP Test Mask
- 0.16um minimum features
- Dummied features included for fab quality data
- SRAM and LOGIC fields included to demonstrate device polish performance
SK194CUBD: Cu/Low-k 90nm Advanced Patterned Wafer
120nm Cu Characterization Wafer with Black Diamond Low-k ILD.
- Uncapped Black Diamond ILD
- Silyb sheet wafers match Silyb Pattern wafer films for improved experimental repeatability.
SK194CUBDSION: Cu/Low-k 90nm Advanced Patterned Wafer
120nm minimum feature Advanced Cu Characterization Wafer with SiON capped Black Diamond Low-k ILD.
- SiON capped Black Diamond ILD
- Silyb sheet wafers match Silyb Pattern wafer films for improved experimental repeatability.
SK194CUTEOS: Cu/TEOS 90nm Advanced Patterned Wafer
120nm minimum feature Cu Characterization Wafer with TEOS ILD.
- TEOS ILD
- Silyb sheet wafers match Silyb Pattern wafer films for improved experimental repeatability.